反應離子蝕刻系統（RIE Systems）
NANO-MASTER的NRE-4000是一個獨立的反應離子蝕刻（RIE）系統，具有淋浴頭氣體分布和水冷的RF基板。它具有不鏽鋼櫃和一個從頂部打開的13英寸圓柱形鋁腔，可載入高達8英寸（200毫米）的晶圓。腔室有兩個口，一個帶有2英寸的窗口，另一個帶有一個空白的口，用於診斷設備，例如端點檢測。該腔室設計極為清潔，可以達到 5x10-7 Torr 或更低的基本壓力，取決於抽氣系統。它可以在 20 mTorr 至 8 Torr 的壓力范圍內操作。標準抽氣系統配備了一個250 l/sec 腐蝕性分子泵、篩選器和一個 10 cfm PFPE 預處理備用泵。射頻功率由 600 W 13.5 MHz 電源提供，配備自動調諧器。基板直流偏壓持續監測，可達 -500 V，這對於異向性蝕刻非常重要。系統由PC控制的公式驅動，使用戶具有最大的靈活性，同時保持高度的可重復性。提供單晶片和卡式自動載入/卸載功能。
功能說明
Compound Semiconductors
GaAs sensor
Photonics
MEMS device fabrication
Deep trenches in silicon etching
Plasma dicing for advanced pakaging
Etching Visa for TSV fabrication
High precision motion sensors
Nano Scale etching and microfluidics
GaAs sensor
Photonics
MEMS device fabrication
Deep trenches in silicon etching
Plasma dicing for advanced pakaging
Etching Visa for TSV fabrication
High precision motion sensors
Nano Scale etching and microfluidics
規格說明
13” aluminum hard anodized chamber
Showerhead gas distribution
Up to 200mm substrates
MFC’s with SS gas lines
DC Bias: up to -500V self bias, up to -1000V external bias
Automatic pressure control
600W RF power supply with auto tuner
Water cooled or heated (400°C) platen
250l/sec corrosive turbomolecular pump with suitable backing pump
Fully automated PC based, recipe driven
LabVIEW user interface
Fully safety interlocked
Showerhead gas distribution
Up to 200mm substrates
MFC’s with SS gas lines
DC Bias: up to -500V self bias, up to -1000V external bias
Automatic pressure control
600W RF power supply with auto tuner
Water cooled or heated (400°C) platen
250l/sec corrosive turbomolecular pump with suitable backing pump
Fully automated PC based, recipe driven
LabVIEW user interface
Fully safety interlocked
其他說明1
Options
ICP high density plasma source for high rate etching
Plasma source for isotropic etching
He backside cooling with mechanical clamp for DRIE
Additional MFC’s
Auto load/unload
Substrate cooling down to -20°C and heating up to 200°C
Spectroscopic End Point Detector
Electostatic chuck
12" wafer chamber
ICP high density plasma source for high rate etching
Plasma source for isotropic etching
He backside cooling with mechanical clamp for DRIE
Additional MFC’s
Auto load/unload
Substrate cooling down to -20°C and heating up to 200°C
Spectroscopic End Point Detector
Electostatic chuck
12" wafer chamber
